n and p-channel enhancement mode power mos fet general features n-channel r ds(on) < 65m ? @ v gs =4.5v r ds(on) < 90m ? @ v gs =2.5v p-channel v ds = -20v,i d = -3a r ds(on) < 110m ? @ v gs =-4.5v r ds(on) < 140m ? @ v gs =-2.5v high power and current handing capability lead free product is acquired surface mount package pin assignment sot-23-6l top view package marking and ordering information device marking device device package reel size tape width quantity MSC0203S sot-23-6l ?180mm 8mm 3000 units absolute maximum ratings (t a =25 unless otherwise noted) parameter symbol n-channel p-channel unit drain-source voltage v ds 20 -20 v gate-source voltage v gs 12 12 v t a =25 3 -3 continuous drain current t a =70 i d 2.4 -2.4 a pulsed drain current (note 1) i dm 13 -13 a maximum power dissipation t a =25 p d 0.8 0.8 w operating junction and stor age temperature range t j ,t stg -55 to 150 -55 to 150 thermal characteristic thermal resistance,junction-to-ambient (note2) r ja n-ch 156 /w thermal resistance,junction-to-ambient (note2) r ja p-ch 156 /w n-channel p-channel pin configuration lead free more semiconductor company limited http://www.moresemi.com 1/10 MSC0203S v ds = 20v,i d = 3a
n-ch electrical characteristics (t a =25 unless otherwise noted) parameter symbol condition min typ max unit off characteristics drain-source breakdown voltage bv dss v gs =0v i d =250 a 20 22 - v zero gate voltage drain current i dss v ds =20v,v gs =0v - - 1 a gate-body leakage current i gss v gs =12v,v ds =0v - - 100 na on characteristics (note 3) gate threshold voltage v gs(th) v ds =v gs ,i d =250 a 0.5 0.75 1.2 v v gs =2.5v, i d =2.8a - 35 90 m ? drain-source on-state resistance r ds(on) v gs =4.5v, i d =3a - 29 65 m ? forward transconductance g fs v ds =5v,i d =3a - 8 - s dynamic characteristics (note4) input capacitance c lss - 260 - pf output capacitance c oss - 48 - pf reverse transfer capacitance c rss v ds =10v,v gs =0v, f=1.0mhz - 27 - pf switching characteristics (note 4) turn-on delay time t d(on) - 2.5 - ns turn-on rise time t r - 3.2 - ns turn-off delay time t d(off) - 21 - ns turn-off fall time t f v dd =10v, r l =3.3 ? v gs =4.5v,r gen =6 ? - 3 - ns total gate charge q g - 2.9 5 nc gate-source charge q gs - 0.4 - nc gate-drain charge q gd v ds =10v,i d =3a, v gs =4.5v - 0.6 - nc drain-source diode characteristics diode forward voltage (note 3) v sd v gs =0v,i s =3 a - - 1.2 v diode forward current (note 2) i s - - 3 a notes: 1. repetitive rating: pulse width limited by maximum junction temperature. 2. surface mounted on fr4 board, t 10 sec. 3. pulse test: pulse width 300 s, duty cycle 2%. 4. guaranteed by design, not subject to production more semiconductor company limited http://www.moresemi.com 2/10 MSC0203S
p-ch electrical characteristics (ta=25 unless otherwise noted parameter symbol condition min typ max unit off characteristics drain-source breakdown voltage bv dss v gs =0v i d =-250 a -20 - v zero gate voltage drain current i dss v ds =-20v,v gs =0v - - -1 a gate-body leakage current i gss v gs =12v,v ds =0v - - 100 na on characteristics (note 3) gate threshold voltage v gs(th) v ds =v gs ,i d =-250 a -0.4 -0.7 -1 v v gs =-4.5v, i d =-2.5 a - 78 110 m ? drain-source on-state resistance r ds(on) v gs =-2.5v, i d =-2a - 102 140 m ? forward transconductance g fs v ds =-5v,i d =-2.5a - 9.5 - s dynamic characteristics (note4) input capacitance c lss - 325 - pf output capacitance c oss - 63 - pf reverse transfer capacitance c rss v ds =-10v,v gs =0v, f=1.0mhz - 37 - pf switching characteristics (note 4) turn-on delay time t d(on) - 11 - ns turn-on rise time t r - 5.5 - ns turn-off delay time t d(off) - 22 - ns turn-off fall time t f v dd =-10v, r l =5 ? v gs =-4.5v,r gen =3 ? - 8 - ns total gate charge q g - 3.2 - nc gate-source charge q gs - 0.6 - nc gate-drain charge q gd v ds =-10v,i d =-2a, v gs =-4.5v - 0.9 - nc drain-source diode characteristics diode forward voltage (note 3) v sd v gs =0v,i s =-3a - - -1.2 v d iode forward current (note 2) i s - - -3 a notes: 1. repetitive rating: pulse width limited by maximum junction temperature. 2. surface mounted on fr4 board, t 10 sec. 3. pulse test: pulse width 300 s, duty cycle 2 . % 4. guaranteed by design, not subject to production more semiconductor company limited http://www.moresemi.com 3/10 MSC0203S
n- channel typical electrical a nd thermal characteristics (curves) vgs rgen vin g vdd rl vout s d figure 1:switching test circuit t j -junction temperature( ) figure 3 power dissipation vds drain-source voltage (v) figure 5 output characteristics v in v out 10% 10% 50% 50% pulse width inverted t d(on) 90% t r t on 90% 10% t off t d(off) t f 90% v in v out 10% 10% 50% 50% pulse width inverted t d(on) 90% 90% t r t on 90% 10% t off t d(off) t f 90% figure 2:switching waveforms t j -junction temperature( ) figure 4 drain current i d - drain current (a) figure 6 drain-source on-resistance normalized on-resistance p d power(w) i d - drain current (a rdson on-resistance(m ) i d - drain current (a) more semiconductor company limited http://www.moresemi.com 4/10 MSC0203S
vgs gate-source voltage (v) figure 7 transfer characteristics vgs gate-source voltage (v) figure 9 rdson vs vgs qg gate charge (nc) figure 11 gate charge t j -junction temperature( ) figure 8 drain-source on-resistance vds drain-source voltage (v) figure 10 capacitance vs vds vsd source-drain voltage (v) figure 12 source- drain diode forward i d - drain current (a) rdson on-resistance(m ) vgs gate-source voltage (v) normalized on-resistance c capacitance (pf) i s - reverse drain current (a) more semiconductor company limited http://www.moresemi.com 5/10 MSC0203S
vds drain-source voltage (v) figure 13 safe operation area square wave pluse duration(sec) figure 14 normalized maximum transient thermal impedance r(t),normalized effective transient thermal im p edance i d - drain current (a) more semiconductor company limited http://www.moresemi.com 6/10 MSC0203S
p- channel typical electrical a nd thermal characteristics (curves) figure 1:switching test circuit t j -junction temperature( ) figure 3 power dissipation -vds drain-source voltage (v) figure 5 output characteristics v in v out 10% 10% 50% 50% pulse width inverted t d(on) 90% t r t on 90% 10% t off t d(off) t f 90% v in v out 10% 10% 50% 50% pulse width inverted t d(on) 90% 90% t r t on 90% 10% t off t d(off) t f 90% figure 2:switching waveforms t j -junction temperature( ) figure 4 drain current -i d - drain current (a) figure 6 drain-source on-resistance p d power(w) -i d - drain current (a rdson on-resistance( ) i d - drain current (a) normalized on-resistance more semiconductor company limited http://www.moresemi.com 7/10 MSC0203S
-vgs gate-source voltage (v) figure 7 transfer characteristics -vgs gate-source voltage (v) figure 9 rdson vs vgs qg gate charge (nc) figure 11 gate charge t j -junction temperature( ) figure 8 drain-source on-resistance -vds drain-source voltage (v) figure 10 capacitance vs vds -vsd source-drain voltage (v) figure 12 source- drain diode forward i d - drain current (a) rdson on-resistance( ) -vgs gate-source voltage (v) normalized on-resistance c capacitance (pf) -i s - reverse drain current (a) more semiconductor company limited http://www.moresemi.com 8/10 MSC0203S
-vds drain-source voltage (v) figure 13 safe operation area square wave pluse duration(sec) figure 14 normalized maximum transient thermal impedance r(t),normalized effective transient thermal im p edance -i d - drain current (a) more semiconductor company limited http://www.moresemi.com 9/10 MSC0203S
sot-23-6l package information more semiconductor company limited http://www.moresemi.com 10/10 MSC0203S
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